DISCRIPTION
The 2N3055 is a silicon epitaxial-base NPN
transistor in Jedec TO-3 metal case. It is intended
for power switching circuits, series and shunt
regulators, output stages and high fidelity
amplifiers.
DATASHEETS
Collector-Base Voltage (IE = 0) 100 V
Collector-Emitter Voltage (RBE = 100W) 70 V
Collector-Emitter Voltage (IB = 0) 60 V
Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 15 A
IB Base Current 7 A
Ptot Total Dissipation at Tc 3 25 oC 115 W
Ts tg Storage Temperature -65 to 200 oC
Tj Max. Operating Junction Temperature 200 oC
The 2N3055 is a silicon epitaxial-base NPN
transistor in Jedec TO-3 metal case. It is intended
for power switching circuits, series and shunt
regulators, output stages and high fidelity
amplifiers.
DATASHEETS
Collector-Base Voltage (IE = 0) 100 V
Collector-Emitter Voltage (RBE = 100W) 70 V
Collector-Emitter Voltage (IB = 0) 60 V
Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 15 A
IB Base Current 7 A
Ptot Total Dissipation at Tc 3 25 oC 115 W
Ts tg Storage Temperature -65 to 200 oC
Tj Max. Operating Junction Temperature 200 oC