TRANSISTOR BD135/137/139

 NPN Epitaxial Silicon Transistor

Medium Power Linear and Switching
Applications
• Complement to BD136, BD138 and BD140 respectively

Collector-Base Voltage :
 BD135      45 volt
 BD137      60 volt
 BD139      80 volt

Collector-Emitter Voltage :
 BD135      45 volt
 BD137      60 volt
 BD139      80 volt

Emitter-Base Voltage 5 V

Collector Current (DC) 1.5 A
Collector Current (Pulse) 3.0 A
Base Current 0.5 A
Collector Dissipation (TC=25°C) 12.5 W
Collector Dissipation (Ta=25°C) 1.25 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C

Transistor TIP 41, TIP41A, TIP41B, TIP41C

 DISCRIPTION

Designed for Complementary Use with the
TIP42 Series
- 65 W at 25°C Case Temperature-
- 6 A Continuous Collector Current-
- 10 A Peak Collector Current-
- Customer-Specified Selections Available

DATASHEET

Collector-base voltage (IE = 0)
TIP41      80 VOLT
TIP41A    100 VOLT
TIP41B     120 VOLT
TIP41C    140 VOLT

Collector-emitter voltage (IB = 0)
TIP41      40 VOLT
TIP41A    60 VOLT
TIP41B    80 VOLT
TIP41C   100 VOLT

Emiter-base voltage  5 volt
Continuous collector current   6 Ampere
Peak collector current           10 A
Continuous base current         3 A
Continuous device dissipation  65 W
Operating junction temperature range  -65 to 150 derajat celcius

Demikian sedikit data mengenai transistor TIP41, smoga bermanfaat

Transistor 2N3055

DISCRIPTION

The 2N3055 is a silicon epitaxial-base NPN
transistor in Jedec TO-3 metal case. It is intended
for power switching circuits, series and shunt
regulators, output stages and high fidelity
amplifiers.

DATASHEETS

 Collector-Base Voltage (IE = 0) 100 V
 Collector-Emitter Voltage (RBE = 100W) 70 V
 Collector-Emitter Voltage (IB = 0) 60 V
 Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 15 A
IB Base Current 7 A
Ptot Total Dissipation at Tc 3 25 oC 115 W
Ts tg Storage Temperature -65 to 200 oC
Tj Max. Operating Junction Temperature 200 oC